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vnd5n07/vnd5n07-1 VNP5N07FI/k5n07fm "omnifet": fully autoprotected power mosfet june 1996 block diagram type v clamp r ds(on) i lim vnd5n07 vnd5n07-1 VNP5N07FI vnk5n07fm 70 v 70 v 70 v 70 v 0.2 w 0.2 w 0.2 w 0.2 w 5 a 5 a 5 a 5 a n linear current limitation n thermal shut down n short circuit protection n integrated clamp n low current drawn from input pin n diagnostic feedback through input pin n esd protection n direct access to the gate of the power mosfet (analog driving) n compatible with standard power mosfet description the vnd5n07, vnd5n07-1, VNP5N07FI and vnk5n07fm are monolithic devices made using sgs-thomson vertical intelligent power m0 technology, intended for replacement of standard power mosfets in dc to 50 khz applications. built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. fault feedback can be detected by monitoring the voltage at the input pin. sot82-fm 1 3 1 2 3 isowatt220 dpak to-252 3 2 1 ipak to-251 1/14
absolute maximum rating symbol parameter value unit dpak ipak isowatt220 sot-82fm v ds drain-source voltage (v in = 0) internally clamped v v in input voltage 18 v i d drain current internally limited a i r reverse dc output current -7 a v esd electrostatic discharge (c= 100 pf, r=1.5 k w ) 2000 v p tot total dissipation at t c = 25 o c60249w t j operating junction temperature internally limited o c t c case operating temperature internally limited o c t stg storage temperature -55 to 150 o c thermal data dpak/ipak isowatt220 sot82-fm r thj-case thermal resistance junction-case max 3.75 5.2 14 o c/w r thj-amb thermal resistance junction-ambient max 100 62.5 100 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v clamp drain-source clamp voltage i d = 200 ma v in = 0 607080 v v clth drain-source clamp threshold voltage i d = 2 ma v in = 0 55 v v incl input-source reverse clamp voltage i in = -1 ma -1 -0.3 v i dss zero input voltage drain current (v in = 0) v ds = 13 v v in = 0 v ds = 25 v v in = 0 50 200 m a m a i iss supply current from input pin v ds = 0 v v in = 10 v 250 500 m a on ( * ) symbol parameter test conditions min. typ. max. unit v in(th) input threshold voltage v ds = v in i d + ii n = 1 ma 0.8 3 v r ds(on) static drain-source on resistance v in = 10 v i d = 2.5 a v in = 5 v i d = 2.5 a 0.200 0.280 w w vnd5n07/vnd5n07-1/VNP5N07FI/vnk5n07fm 2/14
electrical characteristics (continued) dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds = 13 v i d = 2.5 a 3 4 s c oss output capacitance vds = 13 v f = 1 mhz v in = 0 200 300 pf switching ( ** ) symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 15 v i d = 2.5 a v gen = 10 v r gen = 10 w (see figure 3) 50 60 150 40 100 100 300 80 ns ns ns ns t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 15 v i d = 2.5 a v gen = 10 v r gen = 1000 w (see figure 3) 150 400 3900 1100 250 600 5000 1600 ns ns ns ns (di/dt) on turn-on current slope v dd = 15 v i d = 2.5 a v in = 10 v r gen = 10 w 80 a/ m s q i total input charge v dd = 12 v i d = 2.5 a v in = 10 v 18 nc source drain diode symbol parameter test conditions min. typ. max. unit v sd ( * ) forward on voltage i sd = 2.5 a v in = 0 1.6 v t rr ( ** ) q rr ( ** ) i rrm ( ** ) reverse recovery time reverse recovery charge reverse recovery current i sd = 2.5 a di/dt = 100 a/ m s v dd = 30 v t j = 25 o c (see test circuit, figure 5) 150 0.3 5.7 ns m c a protection symbol parameter test conditions min. typ. max. unit i lim drain current limit v in = 10 v v ds = 13 v v in = 5 v v ds = 13 v 3.5 3.5 5 5 7 7 a a t dlim ( ** ) step response current limit v in = 10 v v in = 5 v 15 40 20 60 m s m s t jsh ( ** ) overtemperature shutdown 150 o c t jrs ( ** ) overtemperature reset 135 o c i gf ( ** ) fault sink current v in = 10 v v ds = 13 v v in = 5 v v ds = 13 v 50 20 ma ma e as ( ** ) single pulse avalanche energy starting t j = 25 o c v dd = 20 v v in = 10 v r gen = 1 k w l = 10 mh 0.2 j ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ** ) parameters guaranteed by design/characterization vnd5n07/vnd5n07-1/VNP5N07FI/vnk5n07fm 3/14
during normal operation, the input pin is electrically connected to the gate of the internal power mosfet. the device then behaves like a standard power mosfet and can be used as a switch from dc to 50 khz. the only difference from the users standpoint is that a small dc current (i iss ) flows into the input pin in order to supply the internal circuitry. the device integrates: - overvoltage clamp protection: internally set at 70v, along with the rugged avalanche characteristics of the power mosfet stage give this device unrivalled ruggedness and energy handling capability. this feature is mainly important when driving inductive loads. - linear current limiter circuit: limits the drain current id to ilim whatever the input pin voltage. when the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold t jsh . - overtemperature and short circuit protection: these are based on sensing the chip temperature and are not dependent on the input voltage. the location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. overtemperature cutout occurs at minimum 150 o c. the device is automatically restarted when the chip temperature falls below 135 o c. - status feedback: in the case of an overtemperature fault condition, a status feedback is provided through the input pin. the internal protection circuit disconnects the input f rom the gate and connects it instead to ground via an equivalent resistance of 100 w . the failure can be detected by monitoring the voltage at the input pin, which will be close to ground potential. additional features of this device are esd protection according to the human body model and the ability to be driven from a ttl logic circuit (with a small increase in r ds(on) ). protection features vnd5n07/vnd5n07-1/VNP5N07FI/vnk5n07fm 4/14
thermal impedance for dpak / ipak derating curve transconductance thermal impedance for isowatt220 output characteristics static drain-source on resistance vs input voltage vnd5n07/vnd5n07-1/VNP5N07FI/vnk5n07fm 5/14
static drain-source on resistance input charge vs input voltage normalized input threshold voltage vs temperature static drain-source on resistance capacitance variations normalized on resistance vs temperature vnd5n07/vnd5n07-1/VNP5N07FI/vnk5n07fm 6/14
normalized on resistance vs temperature turn-on current slope turn-off drain-source voltage slope turn-on current s lope turn-off drain-source voltage slope switching time resistive load vnd5n07/vnd5n07-1/VNP5N07FI/vnk5n07fm 7/14
switching time resistive load current limit vs junction temperature source drain diode forward characteristics switching time resistive load step response current limit vnd5n07/vnd5n07-1/VNP5N07FI/vnk5n07fm 8/14
fig. 2: unclamped inductive waveforms fig. 3: switching times test circuits for resistive load fig. 4: input charge test circuit fig. 1: unclamped inductive load test circuits fig. 5: test circuit for inductive load switching and diode recovery times fig. 6: waveforms vnd5n07/vnd5n07-1/VNP5N07FI/vnk5n07fm 9/14
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b2 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l2 0.8 0.031 l4 0.6 1 0.023 0.039 == d l2 l4 1 3 == b e == b2 g 2 a c2 c h a1 detail "a" a2 detail "a" to-252 (dpak) mechanical data 0068772-b vnd5n07/vnd5n07-1/VNP5N07FI/vnk5n07fm 10/14
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e vnd5n07/vnd5n07-1/VNP5N07FI/vnk5n07fm 11/14
dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.4 0.7 0.015 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 isowatt220 mechanical data p011g vnd5n07/vnd5n07-1/VNP5N07FI/vnk5n07fm 12/14
dim. mm inch min. typ. max. min. typ. max. a 2.85 3.05 1.122 1.200 a1 1.47 1.67 0.578 0.657 b 0.40 0.60 0.157 0.236 b1 1.4 1.6 0.551 0.630 b2 1.3 1.5 0.511 0.590 c 0.45 0.6 0.177 0.236 d 10.5 10.9 4.133 4.291 e 2.2 2.8 0.866 1.102 e 7.45 7.75 2.933 3.051 l 15.5 15.9 6.102 6.260 l1 1.95 2.35 0.767 0.925 p032r sot82-fm mechanical data vnd5n07/vnd5n07-1/VNP5N07FI/vnk5n07fm 13/14
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1996 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the n etherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . vnd5n07/vnd5n07-1/VNP5N07FI/vnk5n07fm 14/14

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